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RF071M2S
Diodes
Fast recovery Diode
RF071M2S
Applications General rectification Dimensions (Unit : mm)
1.60.1 0.10.1 0.05
Land size figure (Unit : mm)
1.2 0.85
Features 1) Small power mold type. (PMDU) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss
2.60.1
3.50.2
PMDU
Structure Construction Silicon epitaxial planar
0.90.1
ROHM : PMDU JEDEC :SOD-123 Manufacture Date
0.80.1
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.550.05 1.750.1 0.250.05
3.50.05
8.00.2
1.810.1
4.00.1
1.00.1
3.710.1
1.5MAX
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive) Reverse voltage (DC) Forward current (DC) Average rectified forward current (*1) Forward current surge peak60Hz1cyc Junction temperature Storage temperature
Symbol VRM VR IF Io IFSM Tj Tstg (*1)Mounting on epoxy board. 180Half sine wave
Limits 200 200 1 0.7 15 150 -55 to +150
Unit V V A A A
Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage IR Reverse current Reverse recovery time
trr
Min. -
Typ. 0.79 0.01 12
Max. 0.85 10 25
Unit V A ns
Conditions IF=0.7A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR
Rev.E
3.05
1/3
RF071M2S
Diodes
Electrical characteristic curves (Ta=25C)
1 Ta=150 0.1 Ta=125 10000 1000 Ta=75 100 Ta=25 10 1 0.1 0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 0 50 100 150 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 200 Ta=-25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150 Ta=125
100
f=1MHz f=1MHz REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A)
10
Ta=75 0.01 Ta=25 Ta=-25
0.001
1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30
820 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) Ta=25 IF=0.7A n=30pcs
100 90 80 70 60 50 40 30 20 10 AVE:11.1nA Ta=25 VR=200V n=30pcs
100 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 80 70 60 50 40 30 20 10 0 IR DISPERSION MAP Ct DISPERSION MAP AVE:37.0pF Ta=25 f=1MHz VR=0V n=10pcs
810
800
790 AVE:795.7mV
780
770 VF DISPERSION MAP
0
200 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms 100
30 Ifsm 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE:12.2ns Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
1000 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc
150
100
10
50 AVE:63.0A 0
1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
100
1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) t 100
1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
IM=10mA time
IF=0.5A
1 Rth(j-a) 0.8 FORWARD POWER DISSIPATION:Pf(W) D=1/2 0.6 Sin(180) DC
100
1ms
300us 10 Rth(j-c)
10
0.4
1
0.2 0.1
1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.001
0.01
0.1
1
10
100
1000
0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
TIME:t(s) Rth-t CHARACTERISTICS
Rev.E
2/3
RF071M2S
Diodes
3 0A 0V 2 Io t T DC 1 D=1/2 Sin(180) 0 0 25 50 75 100 125 150 T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=100V Tj=150
3 ELECTROSTATIC DISCHARGE TEST ESD(KV) 0A 0 0V 0 2 Io Io tt TT DC 1 D=1/2 Sin(180) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) VR D=t/T VR=100V VR=100V Tj=150 Tj=150
30 No break at 30kV 25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVE:13.6kV
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
ESD DISPERSION MAP
Rev.E
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0

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